Part Number Hot Search : 
G5800Q1U CYG2000 IRFP4 G1043 2SC18 TLRH1102 EMK21 MP6TP
Product Description
Full Text Search

MRF6S20010N - RF Power Field Effect Transistors The MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications

MRF6S20010N_549055.PDF Datasheet


 Full text search : RF Power Field Effect Transistors The MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications


 Related Part Number
PART Description Maker
NDP6020P NDB6020P P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
IRF540_D ON0285 IRF540/D IRF540-D IRF540 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门))
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola, Inc.
ON Semiconductor
IRF530_D ON0283 IRF530-D IRF530/D 100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门))
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola, Inc.
ON Semiconductor
SSM3J01T Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba Semiconductor
SSM5P05FU Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba Semiconductor
PTF10020 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
ERICSSON POWER MODULES AB
Ericsson Microelectronics
MTD1N40 POWER FIELD EFFECT TRANSISTOR
Motorola, Inc
MRF18085B MRF18085BLSR3 MRF18085BR3 RF Power Field Effect Transistors
Motorola, Inc.
MOTOROLA[Motorola, Inc]
9C12063A10R0FKHFT ATC100B3R0BT500XT ATC100B4R3BT50 RF Power Field Effect Transistor
Freescale Semiconductor, Inc
MRF5S21045 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045 RF Power Field Effect Transistors
FREESCALE[Freescale Semiconductor, Inc]
MRF282 MRF282ZR1 MRF282SR1 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
 
 Related keyword From Full Text Search System
MRF6S20010N Frequenc MRF6S20010N server MRF6S20010N Range MRF6S20010N Stereo MRF6S20010N data
MRF6S20010N Amplifier MRF6S20010N integrated MRF6S20010N programmable MRF6S20010N pitch MRF6S20010N barrier
 

 

Price & Availability of MRF6S20010N

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.44082498550415